When the circuit is exposed to a pulse of nuclear radiation, currents are induced in the collector-base junctions of both transistors but, due to the different radiation sensitivities of the transistors, the current induced in the collector-base junction of the radiation-detecting transistor is substantially greater than that induced in the collector-base junction of the other transistor. One of the transistors is employed principally as a radiation detector and is in a normally non-conducting state and the other transistor is normally in a conducting state. The circuit differs most significantly from a standard monostable multivibrator circuit in that the circuit is adapted to be triggered by a pulse of nuclear radiation rather than electrically and the transistors have substantially different sensitivities to radiation, due to different physical and electrical characteristics and parameters. The pulse generator circuit includes a pair of transistors arranged, together with other electrical components, in the topology of a standard monostable multivibrator circuit. International Nuclear Information System (INIS)Ī pulse generator circuit triggerable by a pulse of nuclear radiation is described. ![]() Pulse generator circuit triggerable by nuclear radiation
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